switching diode features z fast switching speed z for general purpose sw itching applications z high conductance marking: kja or a4 maximum ratings @ta =25 parameter symbol limit unit non-repetitive peak reverse voltage v rm 100 v peak repetitive peak reverse voltage working peak reverse voltage dc blocking voltage v rrm v rwm v r 75 v rms reverse voltage v r(rms) 53 v forward continuous current i fm 300 ma average rectified output current i o 150 ma peak forward surge current @t=1.0 s @t=1.0s i fsm 2.0 1.0 a power dissipation pd 200 mw thermal resistance junction to ambient r ja 625 junction temperature t j 150 storage temperature t stg -5 5~+150 electrical ratings @t a =25 parameter symbol min typ max unit conditions reverse breakdown voltage v (br) 75 v i r =100 a v f1 0.715 v i f =1ma v f2 0.855 v i f =10ma v f3 1.0 v i f =50ma forward voltage v f4 1.25 v i f =150ma i r1 2.5 a v r =75v reverse current i r2 25 na v r =20v capacitance between terminals c t 2 pf v r =0v,f=1mhz reverse r ecovery t ime t rr 4 ns i f =i r =10ma irr=0.1xi r ,r l =100 ? sot-323 1 2 3 /w z z sot-323 plastic-encapsulate d iodes BAV70W 2012-1 willas electronic corp. preliminary
outline drawing dimensions in inches and (millimeters) sot-323 rev.d .056(1.40) .047(1.20) .096(2.45) .078(2.00) .004(0.10)min. .010(0.25) .003(0.08) .043(1.10) .032(0.80) .016(0.40) .008(0.20) .004(0.10)max. .087(2.20) .070(1.80) .054(1.35) .045(1.15) 2012-1 willas electronic corp. sot-323 plastic-encapsulate d iodes BAV70W preliminary
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